JAN2N5153
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- Mfr.Part #
- JAN2N5153
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO39
- Stock
- 39,516
- In Stock ：
- 39,516
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- Radiation Hardening :
- No
- Pin Count :
- 4
- Series :
- Military, MIL-PRF-19500/545
- Max Collector Current :
- 2A
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Pbfree Code :
- No
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Transition Frequency :
- 70MHz
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5.5V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Terminations :
- 3
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- Turn On Time-Max (ton) :
- 500ns
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JAN2N5153
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5153 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2.5A 5V.When VCE saturation is 1.5V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5.5V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 2A volts can be achieved.
JAN2N5153 Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz
JAN2N5153 Applications
There are a lot of Microsemi Corporation
JAN2N5153 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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