JAN2N5002
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- Mfr.Part #
- JAN2N5002
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO59
- Stock
- 44,612
- In Stock ：
- 44,612
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- UPPER
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Max Power Dissipation :
- 2W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Configuration :
- Single
- Case Connection :
- Isolated
- Terminal Form :
- Solder Lug
- Factory Lead Time :
- 22 Weeks
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/534
- Qualification Status :
- Qualified
- Published :
- 2007
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 5V
- Mounting Type :
- Stud Mount
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- NPN
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Current - Collector (Ic) (Max) :
- 5A
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5.5V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Stud
- Number of Pins :
- 3
- Max Collector Current :
- 10A
- Current - Collector Cutoff (Max) :
- 50μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Packaging :
- Bulk
- Datasheets
- JAN2N5002
NPN -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Stud Mount
JAN2N5002 Overview
In this device, the DC current gain is 30 @ 2.5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 5A.Keeping the emitter base voltage at 5.5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
JAN2N5002 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JAN2N5002 Applications
There are a lot of Microsemi Corporation
JAN2N5002 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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