JAN2N3811L

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e0

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Operating Temperature :

-65°C~200°C TJ

Power - Max :

350mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Series :

Military, MIL-PRF-19500/336

Current - Collector Cutoff (Max) :

10μA ICBO

RoHS Status :

Non-RoHS Compliant

Max Collector Current :

50mA

Number of Pins :

6

Reference Standard :

MIL-19500

Collector Emitter Voltage (VCEO) :

250mV

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

350mW

Terminal Form :

Wire

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Number of Terminations :

6

HTS Code :

8541.21.00.95

Collector Base Voltage (VCBO) :

60V

Pin Count :

8

Mount :

Through Hole

Mounting Type :

Through Hole

Package / Case :

TO-78-6 Metal Can

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pbfree Code :

No

Terminal Position :

BOTTOM

Published :

2007

Transistor Element Material :

SILICON