JAN2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Max Power Dissipation :

350mW

Number of Pins :

6

Number of Terminations :

6

Pin Count :

8

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

60V

Packaging :

Bulk

Published :

2007

Transistor Type :

2 PNP (Dual)

HTS Code :

8541.21.00.95

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Wire

Polarity/Channel Type :

PNP

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

Military, MIL-PRF-19500/336

Configuration :

SEPARATE, 2 ELEMENTS

Collector Emitter Voltage (VCEO) :

250mV

Mounting Type :

Through Hole

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

ECCN Code :

EAR99

Max Collector Current :

50mA

Power - Max :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Reference Standard :

MIL-19500

Mount :

Through Hole

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

60V

Package / Case :

TO-78-6 Metal Can

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Current - Collector Cutoff (Max) :

10μA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V