JAN2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

PNP

Power - Max :

350mW

HTS Code :

8541.21.00.95

Max Power Dissipation :

350mW

Collector Emitter Voltage (VCEO) :

250mV

Package / Case :

TO-78-6 Metal Can

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

-65°C~200°C TJ

Terminal Position :

BOTTOM

Transition Frequency :

100MHz

Number of Elements :

2

Mounting Type :

Through Hole

Pin Count :

8

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10μA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Radiation Hardening :

No

Published :

2007

Transistor Type :

2 PNP (Dual)

Reference Standard :

MIL-19500

JESD-609 Code :

e0

Mount :

Through Hole

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/336

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Max Collector Current :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS

Number of Pins :

6

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Terminal Form :

Wire

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant