JAN2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2007

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Transistor Application :

AMPLIFIER

Pin Count :

8

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-78-6 Metal Can

Terminal Position :

BOTTOM

Max Collector Current :

50mA

Terminal Form :

Wire

Packaging :

Bulk

Number of Terminations :

6

Pbfree Code :

No

ECCN Code :

EAR99

Number of Elements :

2

Transition Frequency :

100MHz

JESD-609 Code :

e0

Power - Max :

350mW

Transistor Type :

2 PNP (Dual)

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

10μA ICBO

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Reference Standard :

MIL-19500

Collector Emitter Voltage (VCEO) :

250mV

Configuration :

SEPARATE, 2 ELEMENTS

Series :

Military, MIL-PRF-19500/336

HTS Code :

8541.21.00.95

Mount :

Through Hole

Polarity/Channel Type :

PNP

Max Power Dissipation :

350mW