JAN2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

8

Collector Base Voltage (VCBO) :

60V

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

250mV

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

10μA ICBO

Power - Max :

350mW

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

2

JESD-609 Code :

e0

ECCN Code :

EAR99

Packaging :

Bulk

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Element Material :

SILICON

Published :

2007

Max Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

MIL-19500

Radiation Hardening :

No

HTS Code :

8541.21.00.95

Number of Pins :

6

Mount :

Through Hole

Transistor Application :

AMPLIFIER

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Terminal Position :

BOTTOM

Package / Case :

TO-78-6 Metal Can

Pbfree Code :

No

Polarity/Channel Type :

PNP

Max Collector Current :

50mA

Terminal Form :

Wire

Transistor Type :

2 PNP (Dual)

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-65°C~200°C TJ

Series :

Military, MIL-PRF-19500/336

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V