JAN2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-65°C~200°C TJ

Mount :

Through Hole

Radiation Hardening :

No

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

250mV

ECCN Code :

EAR99

Pbfree Code :

No

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

23 Weeks

Pin Count :

8

Power - Max :

350mW

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

BOTTOM

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Polarity/Channel Type :

PNP

Published :

2007

Qualification Status :

Qualified

Series :

Military, MIL-PRF-19500/336

Package / Case :

TO-78-6 Metal Can

Current - Collector Cutoff (Max) :

10μA ICBO

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Transistor Type :

2 PNP (Dual)

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SEPARATE, 2 ELEMENTS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

350mW

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Wire

Reference Standard :

MIL-19500

Number of Terminations :

6

HTS Code :

8541.21.00.95

Max Collector Current :

50mA