JAN2N3735
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- Mfr.Part #
- JAN2N3735
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO39
- Stock
- 6,252
- In Stock ：
- 6,252
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Turn Off Time-Max (toff) :
- 60ns
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Number of Pins :
- 3
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 75V
- Turn On Time-Max (ton) :
- 48ns
- Transistor Type :
- NPN
- Power - Max :
- 1W
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 900mV
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Collector Current :
- 1.5A
- Series :
- Military, MIL-PRF-19500/395
- Qualification Status :
- Qualified
- Datasheets
- JAN2N3735
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3735 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 1A 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.During maximum operation, collector current can be as low as 1.5A volts.
JAN2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JAN2N3735 Applications
There are a lot of Microsemi Corporation
JAN2N3735 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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