JAN2N3507AL
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- Mfr.Part #
- JAN2N3507AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TO5
- Stock
- 29,607
- In Stock ：
- 29,607
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 90ns
- Terminal Finish :
- TIN LEAD
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Turn On Time-Max (ton) :
- 45ns
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/349
- Number of Pins :
- 3
- Pin Count :
- 3
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Factory Lead Time :
- 22 Weeks
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Published :
- 2007
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Datasheets
- JAN2N3507AL
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3507AL Overview
In this device, the DC current gain is 30 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
JAN2N3507AL Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
JAN2N3507AL Applications
There are a lot of Microsemi Corporation
JAN2N3507AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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