JAN2N3507A

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Mfr.Part #
JAN2N3507A
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 3A TO39
Stock
47,012
In Stock :
47,012

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 1.5A 2V
Terminal Form :
Wire
Series :
Military, MIL-PRF-19500/349
Turn Off Time-Max (toff) :
90ns
Number of Pins :
3
Polarity/Channel Type :
NPN
Published :
2007
Factory Lead Time :
22 Weeks
ECCN Code :
EAR99
Transistor Type :
NPN
Number of Elements :
1
RoHS Status :
Non-RoHS Compliant
Radiation Hardening :
No
Number of Terminations :
3
Terminal Finish :
TIN LEAD
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
1W
Qualification Status :
Qualified
Collector Emitter Voltage (VCEO) :
50V
Package / Case :
TO-205AD, TO-39-3 Metal Can
Terminal Position :
BOTTOM
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 250mA, 2.5A
Mount :
Through Hole
Turn On Time-Max (ton) :
45ns
Max Power Dissipation :
1W
Transistor Element Material :
SILICON
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
3A
Configuration :
Single
Collector Base Voltage (VCBO) :
80V
JESD-609 Code :
e0
Operating Temperature :
-65°C~200°C TJ
Pin Count :
3
Mounting Type :
Through Hole
Packaging :
Bulk
Datasheets
JAN2N3507A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N3507A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, JAN2N3507A pinout, JAN2N3507A datasheet PDF, JAN2N3507A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N3507A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JAN2N3507A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1.5A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 2.5A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

JAN2N3507A Features


the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V


JAN2N3507A Applications


There are a lot of Microsemi Corporation
JAN2N3507A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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