JAN2N3486A
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- Mfr.Part #
- JAN2N3486A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO46
- Stock
- 23,774
- In Stock ：
- 23,774
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Published :
- 2002
- Case Connection :
- COLLECTOR
- Terminal Form :
- Wire
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 600mA
- Power Dissipation :
- 400mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Turn On Time-Max (ton) :
- 45ns
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/392
- Factory Lead Time :
- 23 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Turn Off Time-Max (toff) :
- 200ns
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Max Power Dissipation :
- 400mW
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JAN2N3486A
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N3486A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 600mA volts is possible.
JAN2N3486A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
JAN2N3486A Applications
There are a lot of Microsemi Corporation
JAN2N3486A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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