JAN2N3019
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- Mfr.Part #
- JAN2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO39
- Stock
- 4,345
- In Stock ：
- 4,345
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 800mW
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- JEDEC-95 Code :
- TO-5
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Form :
- Wire
- Number of Pins :
- 3
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Base Voltage (VCBO) :
- 140V
- Series :
- Military, MIL-PRF-19500/391
- Pin Count :
- 2
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Configuration :
- Single
- Lead Free :
- Contains Lead
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Datasheets
- JAN2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3019 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.
JAN2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JAN2N3019 Applications
There are a lot of Microsemi Corporation
JAN2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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