JAN2N2920L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Terminal Form :

Wire

Max Power Dissipation :

350mW

Operating Temperature :

200°C TJ

Pbfree Code :

No

Radiation Hardening :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

70V

Number of Terminations :

6

ECCN Code :

EAR99

JESD-609 Code :

e0

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

2

Series :

Military, MIL-PRF-19500/355

Number of Pins :

6

Reference Standard :

MIL-19500

Current - Collector (Ic) (Max) :

30mA

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Position :

BOTTOM

Package / Case :

TO-78-6 Metal Can

Factory Lead Time :

23 Weeks

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Transistor Type :

2 NPN (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Qualified

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

HTS Code :

8541.21.00.95

Mount :

Through Hole

Max Collector Current :

30mA