JAN2N2907A
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- Mfr.Part #
- JAN2N2907A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 8,319
- In Stock ：
- 8,319
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Contains Lead
- Published :
- 2007
- Mount :
- Through Hole
- Polarity :
- PNP
- Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-18 (TO-206AA)
- Max Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Min Operating Temperature :
- -65°C
- Max Operating Temperature :
- 200°C
- Power - Max :
- 500mW
- Current - Collector (Ic) (Max) :
- 600mA
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/291
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- JAN2N2907A
PNP -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2907A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.
JAN2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18 (TO-206AA)
JAN2N2907A Applications
There are a lot of Microsemi Corporation
JAN2N2907A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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