JAN2N2906A
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- Mfr.Part #
- JAN2N2906A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 3,548
- In Stock ：
- 3,548
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 23 Weeks
- Power - Max :
- 500mW
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/291
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Published :
- 2007
- Max Power Dissipation :
- 500mW
- Polarity :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- Power Dissipation :
- 500mW
- Max Operating Temperature :
- 200°C
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Supplier Device Package :
- TO-18
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -65°C
- Current - Collector (Ic) (Max) :
- 600mA
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Datasheets
- JAN2N2906A
PNP -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2906A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-18 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
JAN2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18
JAN2N2906A Applications
There are a lot of Microsemi Corporation
JAN2N2906A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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