JAN2N2218AL
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- Mfr.Part #
- JAN2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 15,444
- In Stock ：
- 15,444
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10nA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Max Power Dissipation :
- 800mW
- Pbfree Code :
- No
- Current - Collector (Ic) (Max) :
- 800mA
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 3
- Configuration :
- Single
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Reference Standard :
- MIL-19500/251L
- Factory Lead Time :
- 23 Weeks
- Collector Base Voltage (VCBO) :
- 75V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Max Collector Current :
- 800mA
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/251
- Datasheets
- JAN2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2218AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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