JAN2N2218
- Mfr.Part #
- JAN2N2218
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 35,671
- In Stock :
- 35,671
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Pin Count :
- 2
- Qualification Status :
- Qualified
- Configuration :
- Single
- Reference Standard :
- MIL-19500/251
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/251
- Max Power Dissipation :
- 800mW
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA
- HTS Code :
- 8541.21.00.95
- Turn Off Time-Max (toff) :
- 250ns
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Factory Lead Time :
- 23 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 800mA
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Turn On Time-Max (ton) :
- 40ns
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Collector Current :
- 800mA
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Transistor Element Material :
- SILICON
- Datasheets
- JAN2N2218
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N2218 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JAN2N2218 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2218 Applications
There are a lot of Microsemi Corporation
JAN2N2218 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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