IXTY4N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

2Ohm

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation-Max :

89W Tc

Number of Elements :

1

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

150 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-252

Published :

2006

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Packaging :

Tube

Pbfree Code :

yes

Surface Mount :

yes

Series :

PolarHV™

Polarity/Channel Type :

N-Channel

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminals :

2

Package :

Tube

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Power Dissipation (Max) :

89W (Tc)

Manufacturer :

IXYS Corporation

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 25V

Continuous Drain Current (ID) :

4A

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

10A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

600V

Mount :

Surface Mount

Number of Terminations :

2

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252

Package Shape :

RECTANGULAR

Product Status :

Obsolete