IXTY08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Base Product Number :

IXTY08

Continuous Drain Current (ID) :

800mA

Vgs(th) (Max) @ Id :

4V @ 50μA

Product Category :

MOSFET

Product Type :

MOSFET

Factory Lead Time :

24 Weeks

Max Operating Temperature :

150 °C

Height :

2.38 mm

Configuration :

Single

Number of Terminals :

2

Turn-Off Delay Time :

35 ns

Drain-source On Resistance-Max :

20 Ω

Product Status :

Active

Packaging :

Tube

Drain to Source Breakdown Voltage :

1kV

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

1.8 A

Brand :

IXYS

Transistor Polarity :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

37ns

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Transistor Element Material :

SILICON

Series :

Polar™

JESD-30 Code :

R-PSSO-G2

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

1000V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

42 W

Additional Feature :

AVALANCHE RATED

Power Dissipation :

42W

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

80 mJ

Qualification Status :

Not Qualified

Length :

6.73 mm

Supplier Device Package :

TO-252, (D-Pak)

JEDEC-95 Code :

TO-252

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

RoHS :

Details

Power Dissipation (Max) :

42W (Tc)

Power Dissipation-Max :

42W Tc

FET Type :

N-Channel

Package :

Tube

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Width :

6.22 mm

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Mounting Style :

SMD/SMT

Reach Compliance Code :

Compliant

Rds On Max :

20 Ω

Max Power Dissipation :

42 W

FET Feature :

--

Drain Current-Max (Abs) (ID) :

0.8A

Fall Time (Typ) :

34 ns

Input Capacitance :

240 pF

Drain to Source Resistance :

20 Ω

Pbfree Code :

yes

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pin Count :

4

DS Breakdown Voltage-Min :

1000 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Number of Terminations :

2

Min Operating Temperature :

-55 °C