IXTY02N120P
- Mfr.Part #
- IXTY02N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 200MA TO252
- Stock
- 35,935
- In Stock :
- 35,935
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Terminal Form :
- Gull wing
- Published :
- 2004
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 0.6A
- Element Configuration :
- Single
- FET Feature :
- -
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max (Abs) :
- 33 W
- Mounting Type :
- Surface Mount
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 24 Weeks
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 75 Ω @ 500mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 33W (Tc)
- Supplier Device Package :
- TO-252, (D-Pak)
- Package :
- Tube
- ECCN Code :
- EAR99
- Power Dissipation :
- 33W
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 104pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Power Dissipation-Max :
- 33W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Continuous Drain Current (ID) :
- 200mA
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 1.2kV
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 4.7nC @ 10V
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTY02
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 1200 V
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1200V
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-252
- Pin Count :
- 4
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.075Ohm
- Series :
- Polar™
- Manufacturer :
- IXYS
- Datasheets
- IXTY02N120P

N-Channel Tube 75 Ω @ 500mA, 10V ±20V 104pF @ 25V 4.7nC @ 10V 1200V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N120P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 40 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 104pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 0.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTY02N120P Features
the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 1.2kV voltage
based on its rated peak drain current 0.6A.
a 1200V drain to source voltage (Vdss)
IXTY02N120P Applications
There are a lot of IXYS
IXTY02N120P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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