IXTY02N50D
- Mfr.Part #
- IXTY02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO252
- Stock
- 4,624
- In Stock :
- 4,624
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Terminal Finish :
- PURE TIN
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 200mA
- Subcategory :
- MOSFETs
- Pin Count :
- 4
- Channel Mode :
- Depletion
- Factory Lead Time :
- 24 Weeks
- Width :
- 6.22 mm
- DS Breakdown Voltage-Min :
- 500 V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Turn-Off Delay Time :
- 28 ns
- Mount :
- Surface Mount
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Operating Mode :
- Depletion Mode
- Vgs(th) (Max) @ Id :
- --
- Package :
- Tube
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Rise Time :
- 4ns
- Element Configuration :
- Single
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-252, (D-Pak)
- Case Connection :
- DRAIN
- Type :
- -
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Transistor Element Material :
- SILICON
- Series :
- --
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Length :
- 6.73 mm
- RoHS :
- Details
- HTS Code :
- 8541.29.00.95
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Number of Terminals :
- 2
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- Depletion Mode
- Number of Terminations :
- 2
- Height :
- 2.38 mm
- Terminal Form :
- Gull wing
- Product Status :
- Active
- Published :
- 2006
- Drain-source On Resistance-Max :
- 30 Ω
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-252AA
- Product :
- MOSFET Small Signal
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 4 ns
- Configuration :
- Single
- Base Product Number :
- IXTY02
- Power Dissipation :
- 1.1W
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Transistor Polarity :
- N-Channel
- Datasheets
- IXTY02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N50D Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IXTY02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTY02N50D Applications
There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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