IXTY02N50D
- Mfr.Part #
- IXTY02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO252
- Stock
- 4,624
- In Stock :
- 4,624
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Series :
- --
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- TO-252, (D-Pak)
- Continuous Drain Current (ID) :
- 200mA
- Turn-Off Delay Time :
- 28 ns
- Power Dissipation :
- 1.1W
- Transistor Element Material :
- SILICON
- Width :
- 6.22 mm
- Maximum Operating Temperature :
- + 150 C
- Product :
- MOSFET Small Signal
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 30 Ω
- Drain to Source Breakdown Voltage :
- 500V
- Fall Time (Typ) :
- 4 ns
- HTS Code :
- 8541.29.00.95
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Unknown
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Surface Mount :
- yes
- FET Feature :
- Depletion Mode
- Mounting Style :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- Single
- Channel Mode :
- Depletion
- JEDEC-95 Code :
- TO-252AA
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Type :
- -
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Product Category :
- MOSFET
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- --
- Product Status :
- Active
- Length :
- 6.73 mm
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Number of Channels :
- 1 Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Number of Terminals :
- 2
- Base Product Number :
- IXTY02
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- RoHS :
- Details
- Operating Mode :
- Depletion Mode
- Rise Time :
- 4ns
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Factory Lead Time :
- 24 Weeks
- Terminal Finish :
- PURE TIN
- Height :
- 2.38 mm
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Datasheets
- IXTY02N50D
IXTY02N50D Documents

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N50D Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IXTY02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTY02N50D Applications
There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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