IXTY01N100D
- Mfr.Part #
- IXTY01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO252AA
- Stock
- 41,794
- In Stock :
- 41,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 30 ns
- Pbfree Code :
- yes
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±20V
- Resistance :
- 110Ohm
- Mount :
- Surface Mount
- Operating Mode :
- Depletion Mode
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Number of Terminations :
- 2
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Drain to Source Breakdown Voltage :
- 1kV
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-252AA
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 6 ns
- Packaging :
- Tube
- Rise Time :
- 6ns
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- Qualification Status :
- Not Qualified
- FET Feature :
- Depletion Mode
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Depletion
- Width :
- 6.22 mm
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 110 Ω
- Reach Compliance Code :
- Compliant
- Channel Type :
- N Channel
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 100mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Position :
- Single
- Supplier Device Package :
- TO-252, (D-Pak)
- Vgs(th) (Max) @ Id :
- --
- Product :
- MOSFET Small Signal
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification :
- -
- Product Status :
- Active
- Number of Elements :
- 1
- Continuous Drain Current Id :
- 400mA
- Surface Mount :
- yes
- Terminal Finish :
- Pure Tin (Sn)
- Base Product Number :
- IXTY01
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Factory Lead Time :
- 24 Weeks
- HTS Code :
- 8541.29.00.95
- Power Dissipation :
- 1.1W
- Series :
- --
- Length :
- 6.73 mm
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- Gull wing
- Number of Terminals :
- 2
- Package :
- Tube
- Published :
- 2006
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 25 W
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 1000 V
- Package Shape :
- RECTANGULAR
- Height :
- 2.38 mm
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Number of Pins :
- 3
- Pin Count :
- 4
- Datasheets
- IXTY01N100D
IXTY01N100D Documents

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTY01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)
IXTY01N100D Applications
There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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