IXTY01N100D
- Mfr.Part #
- IXTY01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO252AA
- Stock
- 41,794
- In Stock :
- 41,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- --
- Continuous Drain Current (ID) :
- 100mA
- Mounting Style :
- SMD/SMT
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-252, (D-Pak)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 110 Ω
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Vgs(th) (Max) @ Id :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.29.00.95
- Operating Mode :
- Depletion Mode
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Maximum Operating Temperature :
- + 150 C
- Qualification :
- -
- Base Product Number :
- IXTY01
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 25 W
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Surface Mount :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Product :
- MOSFET Small Signal
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 1000V
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Rise Time :
- 6ns
- Continuous Drain Current Id :
- 400mA
- Channel Mode :
- Depletion
- Resistance :
- 110Ohm
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- Drain to Source Breakdown Voltage :
- 1kV
- Channel Type :
- N Channel
- FET Feature :
- Depletion Mode
- Fall Time (Typ) :
- 6 ns
- Length :
- 6.73 mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.1W
- DS Breakdown Voltage-Min :
- 1000 V
- Height :
- 2.38 mm
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pin Count :
- 4
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Number of Terminations :
- 2
- Package :
- Tube
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-252AA
- Number of Terminals :
- 2
- Mount :
- Surface Mount
- Width :
- 6.22 mm
- Terminal Finish :
- Pure Tin (Sn)
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- Datasheets
- IXTY01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTY01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)
IXTY01N100D Applications
There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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