IXTY01N100D

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Mfr.Part #
IXTY01N100D
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO252AA
Stock
41,794
In Stock :
41,794

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
1kV
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Rise Time :
6ns
Number of Pins :
3
Transistor Type :
1 N-Channel
Terminal Finish :
Pure Tin (Sn)
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Product Status :
Active
Published :
2006
Length :
6.73 mm
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Drain to Source Voltage (Vdss) :
1000V
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Terminal Position :
Single
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Depletion
Base Product Number :
IXTY01
JESD-30 Code :
R-PSSO-G2
ECCN Code :
EAR99
HTS Code :
8541.29.00.95
Number of Terminations :
2
Package :
Tube
Number of Elements :
1
Pbfree Code :
yes
Channel Type :
N Channel
Product Type :
MOSFET
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-252AA
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
Radiation Hardening :
No
Supplier Device Package :
TO-252, (D-Pak)
Transistor Application :
SWITCHING
Mounting Style :
SMD/SMT
Pulsed Drain Current-Max (IDM) :
0.4A
Continuous Drain Current Id :
400mA
Continuous Drain Current (ID) :
100mA
Power Dissipation-Max :
1.1W Ta 25W Tc
Power Dissipation :
1.1W
Drive Voltage (Max Rds On, Min Rds On) :
--
Brand :
IXYS
Product Category :
MOSFET
Case Connection :
DRAIN
Series :
--
DS Breakdown Voltage-Min :
1000 V
Vgs (Max) :
±20V
Packaging :
Tube
FET Feature :
Depletion Mode
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
Resistance :
110Ohm
Drain-source On Resistance-Max :
110 Ω
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
24 Weeks
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Package Shape :
RECTANGULAR
Operating Mode :
Depletion Mode
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Surface Mount :
yes
Width :
6.22 mm
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
FET Type :
N-Channel
Mount :
Surface Mount
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product :
MOSFET Small Signal
Fall Time (Typ) :
6 ns
Height :
2.38 mm
Pin Count :
4
Mounting Type :
Surface Mount
Qualification :
-
Terminal Form :
Gull wing
Turn-Off Delay Time :
30 ns
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
--
Power Dissipation-Max (Abs) :
25 W
Datasheets
IXTY01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, IXTY01N100D pinout, IXTY01N100D datasheet PDF, IXTY01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY01N100D Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).

IXTY01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)


IXTY01N100D Applications


There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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