IXTY01N100D

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Mfr.Part #
IXTY01N100D
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO252AA
Stock
41,794
In Stock :
41,794

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
--
Continuous Drain Current (ID) :
100mA
Mounting Style :
SMD/SMT
Packaging :
Tube
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-252, (D-Pak)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Lead Free :
Lead Free
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
ECCN Code :
EAR99
Drain-source On Resistance-Max :
110 Ω
Power Dissipation-Max :
1.1W Ta 25W Tc
Vgs(th) (Max) @ Id :
--
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.95
Operating Mode :
Depletion Mode
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Maximum Operating Temperature :
+ 150 C
Qualification :
-
Base Product Number :
IXTY01
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
25 W
Transistor Type :
1 N-Channel
Configuration :
Single
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Terminal Position :
Single
Manufacturer :
IXYS
Factory Lead Time :
24 Weeks
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Surface Mount :
yes
Gate to Source Voltage (Vgs) :
20V
Product :
MOSFET Small Signal
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Published :
2006
Drain to Source Voltage (Vdss) :
1000V
Product Type :
MOSFET
Pbfree Code :
yes
Rise Time :
6ns
Continuous Drain Current Id :
400mA
Channel Mode :
Depletion
Resistance :
110Ohm
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
0.4A
Drain to Source Breakdown Voltage :
1kV
Channel Type :
N Channel
FET Feature :
Depletion Mode
Fall Time (Typ) :
6 ns
Length :
6.73 mm
Radiation Hardening :
No
Transistor Element Material :
SILICON
Power Dissipation :
1.1W
DS Breakdown Voltage-Min :
1000 V
Height :
2.38 mm
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
30 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Pin Count :
4
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Number of Terminations :
2
Package :
Tube
Element Configuration :
Single
JEDEC-95 Code :
TO-252AA
Number of Terminals :
2
Mount :
Surface Mount
Width :
6.22 mm
Terminal Finish :
Pure Tin (Sn)
Drive Voltage (Max Rds On, Min Rds On) :
--
Minimum Operating Temperature :
- 55 C
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Datasheets
IXTY01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTY01N100D pinout, IXTY01N100D datasheet PDF, IXTY01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY01N100D Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).

IXTY01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)


IXTY01N100D Applications


There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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