IXTY44N10T

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Mfr.Part #
IXTY44N10T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 44A TO252
Stock
5,513
In Stock :
5,513

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS
Product Status :
Active
Fall Time (Typ) :
32 ns
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Height :
2.38 mm
Rise Time :
47ns
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
30m Ω @ 22A, 10V
Mounting Style :
SMD/SMT
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~175°C TJ
Base Product Number :
IXTY44
Radiation Hardening :
No
RoHS :
Details
Product Type :
MOSFET
Configuration :
Single
Package :
Tube
Number of Pins :
3
Tradename :
HiPerFET
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Series :
TrenchMV™
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Number of Elements :
1
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Mount :
Surface Mount
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
250 mJ
Published :
2006
Power Dissipation :
130W
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
100V
FET Feature :
--
Pin Count :
4
Continuous Drain Current (ID) :
44A
Supplier Device Package :
TO-252, (D-Pak)
Brand :
IXYS
Mounting Type :
Surface Mount
Element Configuration :
Single
Factory Lead Time :
24 Weeks
Packaging :
Tube
Type :
TrenchMV Power MOSFET
Transistor Element Material :
SILICON
Number of Terminations :
2
JEDEC-95 Code :
TO-252AA
Length :
6.22 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
130W Tc
Power Dissipation (Max) :
130W (Tc)
Pbfree Code :
yes
Channel Mode :
Enhancement
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Turn-Off Delay Time :
36 ns
Maximum Operating Temperature :
+ 175 C
Width :
6.73 mm
Vgs (Max) :
±30V
Number of Channels :
1 Channel
Terminal Form :
Gull wing
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
100V
Input Capacitance (Ciss) (Max) @ Vds :
1262pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXTY44N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY44N10T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Type:TrenchMV Power MOSFET, Number of Terminations:2, Number of Channels:1 Channel, IXTY44N10T pinout, IXTY44N10T datasheet PDF, IXTY44N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY44N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY44N10T


N-Channel Tube 30m Ω @ 22A, 10V ±30V 1262pF @ 25V 33nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY44N10T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1262pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY44N10T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns
a 100V drain to source voltage (Vdss)


IXTY44N10T Applications


There are a lot of IXYS
IXTY44N10T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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