IXTY44N10T
- Mfr.Part #
- IXTY44N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 44A TO252
- Stock
- 5,513
- In Stock :
- 5,513
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Product Status :
- Active
- Fall Time (Typ) :
- 32 ns
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Height :
- 2.38 mm
- Rise Time :
- 47ns
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 22A, 10V
- Mounting Style :
- SMD/SMT
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Base Product Number :
- IXTY44
- Radiation Hardening :
- No
- RoHS :
- Details
- Product Type :
- MOSFET
- Configuration :
- Single
- Package :
- Tube
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- TrenchMV™
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Published :
- 2006
- Power Dissipation :
- 130W
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- FET Feature :
- --
- Pin Count :
- 4
- Continuous Drain Current (ID) :
- 44A
- Supplier Device Package :
- TO-252, (D-Pak)
- Brand :
- IXYS
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Factory Lead Time :
- 24 Weeks
- Packaging :
- Tube
- Type :
- TrenchMV Power MOSFET
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-252AA
- Length :
- 6.22 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 130W Tc
- Power Dissipation (Max) :
- 130W (Tc)
- Pbfree Code :
- yes
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Turn-Off Delay Time :
- 36 ns
- Maximum Operating Temperature :
- + 175 C
- Width :
- 6.73 mm
- Vgs (Max) :
- ±30V
- Number of Channels :
- 1 Channel
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1262pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTY44N10T

N-Channel Tube 30m Ω @ 22A, 10V ±30V 1262pF @ 25V 33nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY44N10T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1262pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTY44N10T Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns
a 100V drain to source voltage (Vdss)
IXTY44N10T Applications
There are a lot of IXYS
IXTY44N10T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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