IXTY3N60P

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Mfr.Part #
IXTY3N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO252
Stock
16,255
In Stock :
16,255

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
3A
Power Dissipation :
70W
Power Dissipation (Max) :
70W (Tc)
Drain Current-Max (Abs) (ID) :
3A
Number of Terminals :
2
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Pbfree Code :
yes
Terminal Form :
Gull wing
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Terminal Finish :
Matte Tin (Sn)
JEDEC-95 Code :
TO-252AA
FET Feature :
--
Rise Time :
25ns
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
100 mJ
Pulsed Drain Current-Max (IDM) :
6A
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
600V
Turn-Off Delay Time :
58 ns
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSSO-G2
Resistance :
2.9Ohm
Supplier Device Package :
TO-252, (D-Pak)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current Rating :
3A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Series :
PolarHV™
Mount :
Surface Mount
Mounting Type :
Surface Mount
Voltage - Rated DC :
600V
DS Breakdown Voltage-Min :
600 V
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
2.9 Ω
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
FET Type :
N-Channel
Fall Time (Typ) :
22 ns
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Factory Lead Time :
8 Weeks
Number of Terminations :
2
Product Status :
Obsolete
Published :
2006
RoHS Status :
RoHS Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation-Max :
70W Tc
Transistor Element Material :
SILICON
Surface Mount :
yes
Datasheets
IXTY3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY3N60P pinout, IXTY3N60P datasheet PDF, IXTY3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY3N60P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 411pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 58 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)


IXTY3N60P Applications


There are a lot of IXYS
IXTY3N60P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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