IXTY2N80P

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Mfr.Part #
IXTY2N80P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO252
Stock
39,272
In Stock :
39,272

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
6Ohm
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
4A
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Qualification Status :
Not Qualified
Published :
2006
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
2A
Surface Mount :
yes
Pin Count :
4
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
70W Tc
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
100 mJ
Case Connection :
DRAIN
Fall Time (Typ) :
28 ns
RoHS :
Compliant
JESD-609 Code :
e3
RoHS Status :
RoHS Compliant
Terminal Finish :
Matte Tin (Sn)
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Terminal Position :
Single
Min Operating Temperature :
-55 °C
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Resistance :
6 Ω
Max Power Dissipation :
70 W
FET Type :
N-Channel
Packaging :
Tube
Rds On Max :
6 Ω
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Number of Terminations :
2
DS Breakdown Voltage-Min :
800 V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rise Time :
35ns
Series :
PolarHV™
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
2A
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
800V
Reach Compliance Code :
Compliant
Power Dissipation :
70W
JEDEC-95 Code :
TO-252AA
Factory Lead Time :
8 Weeks
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Vgs (Max) :
±30V
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
440 pF
Package :
Tube
Pbfree Code :
yes
Mount :
Surface Mount
Manufacturer :
IXYS Corporation
Number of Terminals :
2
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Drain to Source Voltage (Vdss) :
800V
Max Operating Temperature :
150 °C
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-252, (D-Pak)
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
53 ns
Power Dissipation (Max) :
70W (Tc)
Element Configuration :
Single
Datasheets
IXTY2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTY2N80P pinout, IXTY2N80P datasheet PDF, IXTY2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 4A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 6 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTY2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
single MOSFETs transistor is 6 Ω
a 800V drain to source voltage (Vdss)


IXTY2N80P Applications


There are a lot of IXYS
IXTY2N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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