IXTY2N60P

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Mfr.Part #
IXTY2N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 2A TO252
Stock
29,004
In Stock :
29,004

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
600V
Drain to Source Voltage (Vdss) :
600V
Package :
Tube
Rds On (Max) @ Id, Vgs :
5.1 Ω @ 1A, 10V
Type :
PolarHV Power MOSFET
RoHS :
Details
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
55W (Tc)
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Product Category :
MOSFET
Drain-source On Resistance-Max :
5.1 Ω
Lead Free :
Lead Free
Height :
2.38 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-252, (D-Pak)
Polarity/Channel Type :
N-Channel
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-252AA
Surface Mount :
yes
FET Type :
N-Channel
Continuous Drain Current (ID) :
2A
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Number of Elements :
1
Reach Compliance Code :
Compliant
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
Polar™
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
4A
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Terminal Position :
Single
Factory Lead Time :
8 Weeks
Pin Count :
4
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
150 mJ
RoHS Status :
RoHS Compliant
Current Rating :
2A
Power Dissipation-Max :
55W Tc
Number of Channels :
1 Channel
Pbfree Code :
yes
DS Breakdown Voltage-Min :
600 V
Rise Time :
20ns
Number of Terminations :
2
Configuration :
Single
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
JESD-30 Code :
R-PSSO-G2
Manufacturer :
IXYS
Drain Current-Max (Abs) (ID) :
2A
Fall Time (Typ) :
23 ns
Power Dissipation :
55W
Number of Terminals :
2
Brand :
IXYS
Published :
2006
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Tradename :
PolarHV
Voltage - Rated DC :
600V
Terminal Form :
Gull wing
Mount :
Surface Mount
Turn-Off Delay Time :
60 ns
Length :
6.22 mm
Product Status :
Obsolete
Mounting Type :
Surface Mount
Power Dissipation-Max (Abs) :
55 W
Width :
6.73 mm
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Vgs (Max) :
±30V
Datasheets
IXTY2N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY2N60P pinout, IXTY2N60P datasheet PDF, IXTY2N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N60P


N-Channel Tube 5.1 Ω @ 1A, 10V ±30V 240pF @ 25V 7nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTY2N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 4A.
a 600V drain to source voltage (Vdss)


IXTY2N60P Applications


There are a lot of IXYS
IXTY2N60P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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