IXTY2N60P
- Mfr.Part #
- IXTY2N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A TO252
- Stock
- 29,004
- In Stock :
- 29,004
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 5.1 Ω @ 1A, 10V
- Type :
- PolarHV Power MOSFET
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 55W (Tc)
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 5.1 Ω
- Lead Free :
- Lead Free
- Height :
- 2.38 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-252, (D-Pak)
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-252AA
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- Polar™
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 4A
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Terminal Position :
- Single
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 150 mJ
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 2A
- Power Dissipation-Max :
- 55W Tc
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 20ns
- Number of Terminations :
- 2
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 2A
- Fall Time (Typ) :
- 23 ns
- Power Dissipation :
- 55W
- Number of Terminals :
- 2
- Brand :
- IXYS
- Published :
- 2006
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- PolarHV
- Voltage - Rated DC :
- 600V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 60 ns
- Length :
- 6.22 mm
- Product Status :
- Obsolete
- Mounting Type :
- Surface Mount
- Power Dissipation-Max (Abs) :
- 55 W
- Width :
- 6.73 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Datasheets
- IXTY2N60P

N-Channel Tube 5.1 Ω @ 1A, 10V ±30V 240pF @ 25V 7nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY2N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTY2N60P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 4A.
a 600V drain to source voltage (Vdss)
IXTY2N60P Applications
There are a lot of IXYS
IXTY2N60P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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