IXTY2N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Terminal Form :

Gull wing

Height :

2.38 mm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Number of Channels :

1 Channel

Product Type :

MOSFET

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

7.5 Ω

Configuration :

Single

Number of Terminals :

2

Packaging :

Tube

Input Capacitance :

655 pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Pin Count :

4

Rise Time :

29ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

80 ns

Case Connection :

DRAIN

Drain to Source Resistance :

7.5 Ω

JESD-609 Code :

e3

Manufacturer :

IXYS

Min Operating Temperature :

-55 °C

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Power Dissipation :

86W

Gate to Source Voltage (Vgs) :

20V

Series :

Polar™

Max Power Dissipation :

86 W

Package :

Tube

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Published :

2008

Width :

6.22 mm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

1000 V

Polarity/Channel Type :

N-Channel

Length :

6.73 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Operating Temperature :

150 °C

Transistor Polarity :

N-Channel

RoHS :

Details

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

86W Tc

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

86 W

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

5A

Supplier Device Package :

TO-252, (D-Pak)

FET Feature :

-

Mount :

Surface Mount

Rds On Max :

7.5 Ω

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

1000V

Avalanche Energy Rating (Eas) :

150 mJ

Base Product Number :

IXTY2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2A

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

1kV

Terminal Finish :

Matte Tin (Sn)

Product Category :

MOSFET

Fall Time (Typ) :

27 ns

Transistor Application :

SWITCHING

Power Dissipation (Max) :

86W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

24.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Qualification Status :

Not Qualified