IXTY1R4N100P

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Mfr.Part #
IXTY1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO252
Stock
23,490
In Stock :
23,490

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
JESD-609 Code :
e3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Polarity/Channel Type :
N-Channel
Pin Count :
3
Surface Mount :
yes
Mounting Style :
SMD/SMT
Power Dissipation (Max) :
63W (Tc)
Drain-source On Resistance-Max :
11 Ω
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
3A
Published :
2011
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
Polar™
Turn-Off Delay Time :
65 ns
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Height :
2.38 mm
Terminal Form :
Gull wing
Width :
6.22 mm
DS Breakdown Voltage-Min :
1000 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Rise Time :
35ns
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max (Abs) :
63 W
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
1.4 A
Transistor Element Material :
SILICON
Number of Terminations :
2
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn)
FET Feature :
--
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Length :
6.73 mm
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Avalanche Energy Rating (Eas) :
100 mJ
Number of Elements :
1
Product Category :
MOSFET
Continuous Drain Current (ID) :
1.4A
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
63W
Fall Time (Typ) :
28 ns
Number of Channels :
1 Channel
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
1kV
Product Status :
Active
Supplier Device Package :
TO-252, (D-Pak)
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Terminal Position :
Single
Number of Terminals :
2
Factory Lead Time :
24 Weeks
Channel Mode :
Enhancement
Product Type :
MOSFET
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
Power Dissipation-Max :
63W Tc
RoHS :
Details
Mount :
Surface Mount
Base Product Number :
IXTY1
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXTY1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTY1R4N100P pinout, IXTY1R4N100P datasheet PDF, IXTY1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1R4N100P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1.4 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 3A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTY1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTY1R4N100P Applications


There are a lot of IXYS
IXTY1R4N100P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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