IXTY1R4N100P
- Mfr.Part #
- IXTY1R4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.4A TO252
- Stock
- 23,490
- In Stock :
- 23,490
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Surface Mount :
- yes
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 63W (Tc)
- Drain-source On Resistance-Max :
- 11 Ω
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 3A
- Published :
- 2011
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Polar™
- Turn-Off Delay Time :
- 65 ns
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Height :
- 2.38 mm
- Terminal Form :
- Gull wing
- Width :
- 6.22 mm
- DS Breakdown Voltage-Min :
- 1000 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Rise Time :
- 35ns
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max (Abs) :
- 63 W
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 1.4 A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Length :
- 6.73 mm
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 1.4A
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 63W
- Fall Time (Typ) :
- 28 ns
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 1kV
- Product Status :
- Active
- Supplier Device Package :
- TO-252, (D-Pak)
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Terminal Position :
- Single
- Number of Terminals :
- 2
- Factory Lead Time :
- 24 Weeks
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 63W Tc
- RoHS :
- Details
- Mount :
- Surface Mount
- Base Product Number :
- IXTY1
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTY1R4N100P

N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R4N100P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1.4 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 3A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTY1R4N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTY1R4N100P Applications
There are a lot of IXYS
IXTY1R4N100P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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