IXTY1N80P

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Mfr.Part #
IXTY1N80P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 1A TO252
Stock
42,478
In Stock :
42,478

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
1A
JESD-30 Code :
R-PSSO-G2
Mounting Style :
SMD/SMT
Terminal Finish :
Pure Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
2A
ECCN Code :
EAR99
JEDEC-95 Code :
TO-252
Power Dissipation (Max) :
42W (Tc)
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
14 Ω @ 500mA, 10V
Power Dissipation-Max (Abs) :
42 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Pbfree Code :
yes
DS Breakdown Voltage-Min :
800V
Vgs(th) (Max) @ Id :
4V @ 50μA
Published :
2009
Transistor Application :
SWITCHING
RoHS :
Details
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
1A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type :
N-Channel
Supplier Device Package :
TO-252, (D-Pak)
Terminal Position :
Single
Power Dissipation :
42W
Mounting Type :
Surface Mount
Factory Lead Time :
24 Weeks
Package Shape :
RECTANGULAR
Number of Elements :
1
Vgs (Max) :
±20V
Base Product Number :
IXTY1
Packaging :
Tube
Number of Pins :
3
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
75 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
4
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Series :
Polar™
Number of Terminations :
2
Transistor Polarity :
N-Channel
Brand :
IXYS
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Power Dissipation-Max :
42W Tc
Qualification Status :
Not Qualified
Surface Mount :
yes
Drain to Source Voltage (Vdss) :
800V
Mount :
Surface Mount
Drain-source On Resistance-Max :
14 Ω
Number of Terminals :
2
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXTY1N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:2, IXTY1N80P pinout, IXTY1N80P datasheet PDF, IXTY1N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N80P


N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N80P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY1N80P Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)


IXTY1N80P Applications


There are a lot of IXYS
IXTY1N80P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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