IXTY1N80P
- Mfr.Part #
- IXTY1N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1A TO252
- Stock
- 42,478
- In Stock :
- 42,478
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 1A
- JESD-30 Code :
- R-PSSO-G2
- Mounting Style :
- SMD/SMT
- Terminal Finish :
- Pure Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 2A
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-252
- Power Dissipation (Max) :
- 42W (Tc)
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 14 Ω @ 500mA, 10V
- Power Dissipation-Max (Abs) :
- 42 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 800V
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Published :
- 2009
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-252, (D-Pak)
- Terminal Position :
- Single
- Power Dissipation :
- 42W
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXTY1
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 4
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Series :
- Polar™
- Number of Terminations :
- 2
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 42W Tc
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 800V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 14 Ω
- Number of Terminals :
- 2
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTY1N80P

N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTY1N80P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)
IXTY1N80P Applications
There are a lot of IXYS
IXTY1N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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