IXTY1N80

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Mfr.Part #
IXTY1N80
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 750MA TO252AA
Stock
7,400
In Stock :
7,400

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Mounting Style :
SMD/SMT
Drain to Source Voltage (Vdss) :
800V
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
40W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
24 Weeks
DS Breakdown Voltage-Min :
800 V
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-252AA
Base Product Number :
IXTY1
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.75A
Turn-Off Delay Time :
40 ns
Mount :
Surface Mount
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Brand :
IXYS
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Box
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Terminal Position :
Single
Published :
2003
Avalanche Energy Rating (Eas) :
100 mJ
Current - Continuous Drain (Id) @ 25°C :
750mA Tc
Qualification Status :
Not Qualified
Power Dissipation :
40W
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Channel Mode :
Enhancement
Rise Time :
19ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
RoHS :
Details
Subcategory :
MOSFETs
Pin Count :
4
RoHS Status :
ROHS3 Compliant
Width :
6.22 mm
Terminal Form :
Gull wing
Transistor Polarity :
N-Channel
Number of Terminals :
2
Packaging :
Bulk
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pulsed Drain Current-Max (IDM) :
3A
JEDEC-95 Code :
TO-252AA
Drain to Source Breakdown Voltage :
800V
Height :
2.38 mm
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
750mA
Product Type :
MOSFET
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Manufacturer :
IXYS
Length :
6.73 mm
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 25V
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
40W (Tc)
Drain-source On Resistance-Max :
11 Ω
Fall Time (Typ) :
28 ns
Surface Mount :
yes
Transistor Type :
1 N-Channel
Series :
--
Transistor Element Material :
SILICON
Datasheets
IXTY1N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, IXTY1N80 pinout, IXTY1N80 datasheet PDF, IXTY1N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N80


N-Channel Bulk 11 Ω @ 500mA, 10V ±20V 220pF @ 25V 8.5nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N80 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 220pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 750mA.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.0.75A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTY1N80 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 800V drain to source voltage (Vdss)


IXTY1N80 Applications


There are a lot of IXYS
IXTY1N80 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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