IXTY1N80
- Mfr.Part #
- IXTY1N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 750MA TO252AA
- Stock
- 7,400
- In Stock :
- 7,400
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Mounting Style :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 800V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 40W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 24 Weeks
- DS Breakdown Voltage-Min :
- 800 V
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-252AA
- Base Product Number :
- IXTY1
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Turn-Off Delay Time :
- 40 ns
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Brand :
- IXYS
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 500mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Box
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Position :
- Single
- Published :
- 2003
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 40W
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Channel Mode :
- Enhancement
- Rise Time :
- 19ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Subcategory :
- MOSFETs
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.22 mm
- Terminal Form :
- Gull wing
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- Packaging :
- Bulk
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 3A
- JEDEC-95 Code :
- TO-252AA
- Drain to Source Breakdown Voltage :
- 800V
- Height :
- 2.38 mm
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 750mA
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Manufacturer :
- IXYS
- Length :
- 6.73 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 25V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 40W (Tc)
- Drain-source On Resistance-Max :
- 11 Ω
- Fall Time (Typ) :
- 28 ns
- Surface Mount :
- yes
- Transistor Type :
- 1 N-Channel
- Series :
- --
- Transistor Element Material :
- SILICON
- Datasheets
- IXTY1N80

N-Channel Bulk 11 Ω @ 500mA, 10V ±20V 220pF @ 25V 8.5nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N80 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 220pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 750mA.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.0.75A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTY1N80 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 800V drain to source voltage (Vdss)
IXTY1N80 Applications
There are a lot of IXYS
IXTY1N80 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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