IXTY1N100P

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Mfr.Part #
IXTY1N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 1A TO252
Stock
25,604
In Stock :
25,604

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn)
Product Type :
MOSFET
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Rise Time :
26ns
Transistor Element Material :
SILICON
Factory Lead Time :
24 Weeks
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Pin Count :
4
Channel Mode :
Enhancement
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-252AA
Power Dissipation :
50W
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Package :
Tube
Power Dissipation-Max (Abs) :
50 W
Power Dissipation (Max) :
50W (Tc)
Base Product Number :
IXTY1
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
1.8A
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
24 ns
Drain Current-Max (Abs) (ID) :
1A
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Series :
Polar™
Surface Mount :
yes
DS Breakdown Voltage-Min :
1000 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
50W Tc
Transistor Application :
SWITCHING
Length :
6.73 mm
Rds On (Max) @ Id, Vgs :
15 Ω @ 500mA, 10V
FET Type :
N-Channel
Terminal Position :
Single
Drain-source On Resistance-Max :
15 Ω
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Continuous Drain Current (ID) :
1A
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
100 mJ
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
Drain to Source Voltage (Vdss) :
1000V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Mount :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Width :
6.22 mm
Brand :
IXYS
Vgs (Max) :
±20V
Case Connection :
DRAIN
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Height :
2.38 mm
Number of Terminals :
2
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Published :
2008
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
1A Tc
JESD-609 Code :
e3
Turn-Off Delay Time :
55 ns
Drain to Source Breakdown Voltage :
1kV
Datasheets
IXTY1N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY1N100P pinout, IXTY1N100P datasheet PDF, IXTY1N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N100P


N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 331pF @ 25V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 1.8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTY1N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTY1N100P Applications


There are a lot of IXYS
IXTY1N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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