IXTY1N100P
- Mfr.Part #
- IXTY1N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1A TO252
- Stock
- 25,604
- In Stock :
- 25,604
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Rise Time :
- 26ns
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 24 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation :
- 50W
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 50 W
- Power Dissipation (Max) :
- 50W (Tc)
- Base Product Number :
- IXTY1
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 24 ns
- Drain Current-Max (Abs) (ID) :
- 1A
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Series :
- Polar™
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 1000 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 50W Tc
- Transistor Application :
- SWITCHING
- Length :
- 6.73 mm
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 500mA, 10V
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 15 Ω
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 1A
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 331pF @ 25V
- Drain to Source Voltage (Vdss) :
- 1000V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-252, (D-Pak)
- Width :
- 6.22 mm
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Height :
- 2.38 mm
- Number of Terminals :
- 2
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 15.5nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Published :
- 2008
- Mounting Style :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 55 ns
- Drain to Source Breakdown Voltage :
- 1kV
- Datasheets
- IXTY1N100P

N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N100P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 331pF @ 25V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 1.8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTY1N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTY1N100P Applications
There are a lot of IXYS
IXTY1N100P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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