IXTY18P10T

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Mfr.Part #
IXTY18P10T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 100V 18A TO252
Stock
68
In Stock :
68

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
18A
Supplier Device Package :
TO-252AA
Configuration :
Single
Product Status :
Active
Transistor Element Material :
SILICON
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Element Configuration :
Single
Power Dissipation-Max :
83W Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Reach Compliance Code :
Unknown
Published :
2012
JESD-30 Code :
R-PSSO-G2
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
1 P-Channel
Avalanche Energy Rating (Eas) :
200 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.12Ohm
Pulsed Drain Current-Max (IDM) :
60A
Product Type :
MOSFET
RoHS :
Details
Vgs (Max) :
±15V
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Number of Elements :
1
Terminal Finish :
Pure Tin (Sn)
DS Breakdown Voltage-Min :
100V
Package :
Tube
Channel Mode :
Enhancement
Base Product Number :
IXTY18
Pin Count :
4
Drain to Source Voltage (Vdss) :
100V
ECCN Code :
EAR99
Transistor Polarity :
P-Channel
FET Feature :
-
Number of Terminations :
2
Rise Time :
26ns
Terminal Form :
Gull wing
FET Type :
P-Channel
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Rds On (Max) @ Id, Vgs :
120m Ω @ 9A, 10V
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
24 Weeks
Turn-Off Delay Time :
44 ns
Mounting Type :
Surface Mount
Fall Time (Typ) :
22 ns
Power Dissipation (Max) :
83W (Tc)
Series :
TrenchP™
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Gate to Source Voltage (Vgs) :
15V
Manufacturer :
IXYS
Datasheets
IXTY18P10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY18P10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTY18P10T pinout, IXTY18P10T datasheet PDF, IXTY18P10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY18P10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY18P10T


P-Channel Tube 120m Ω @ 9A, 10V ±15V 2100pF @ 25V 39nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY18P10T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2100pF @ 25V.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTY18P10T Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 44 ns
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)


IXTY18P10T Applications


There are a lot of IXYS
IXTY18P10T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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