IXTY12N06T
- Mfr.Part #
- IXTY12N06T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A TO252
- Stock
- 3,998
- In Stock :
- 3,998
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2008
- Continuous Drain Current (ID) :
- 12A
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 3.4nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 256pF @ 25V
- Power Dissipation-Max :
- 33W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 25μA
- Pulsed Drain Current-Max (IDM) :
- 30A
- Drain-source On Resistance-Max :
- 0.085Ohm
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 33 W
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- SMD/SMT
- JEDEC-95 Code :
- TO-252AB
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-252
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- Surface Mount :
- yes
- Maximum Operating Temperature :
- + 175 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 60V
- Series :
- TrenchMV™
- Drain to Source Voltage (Vdss) :
- 60V
- Drain Current-Max (Abs) (ID) :
- 12 A
- DS Breakdown Voltage-Min :
- 60 V
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 2
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Terminal Form :
- Gull wing
- Product Status :
- Obsolete
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 33W
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Package :
- Tube
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 6A, 10V
- Pin Count :
- 4
- Configuration :
- Single
- Brand :
- IXYS
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 33W (Tc)
- Datasheets
- IXTY12N06T

N-Channel Tube 85m Ω @ 6A, 10V ±20V 256pF @ 25V 3.4nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY12N06T Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The maximum input capacitance of this device is 256pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 12 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 30A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTY12N06T Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 30A.
a 60V drain to source voltage (Vdss)
IXTY12N06T Applications
There are a lot of IXYS
IXTY12N06T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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