IXTY10P15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Power Dissipation-Max :

83W Tc

Transistor Element Material :

SILICON

Terminal Position :

Single

Supplier Device Package :

TO-252

Product Category :

MOSFET

FET Type :

P-Channel

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

350m Ω @ 5A, 10V

Base Product Number :

IXTY10

RoHS :

Details

Number of Elements :

1

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

150V

Number of Terminations :

2

Transistor Polarity :

P-Channel

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

83 W

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Package Shape :

RECTANGULAR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Mounting Type :

Surface Mount

FET Feature :

--

Avalanche Energy Rating (Eas) :

200 mJ

Product Status :

Active

Power Dissipation (Max) :

83W (Tc)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±15V

Drain Current-Max (Abs) (ID) :

10 A

Published :

2010

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Reach Compliance Code :

Unknown

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Continuous Drain Current (ID) :

10A

Mounting Style :

SMD/SMT

Manufacturer :

IXYS

Pin Count :

4

Channel Mode :

Enhancement

Number of Terminals :

2

Mount :

Surface Mount

Series :

TrenchP™

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

150V

Drain-source On Resistance-Max :

0.35Ohm

Brand :

IXYS

Packaging :

Tube

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

30A