IXTV30N60PS
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- Mfr.Part #
- IXTV30N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A PLUS-220SMD
- Stock
- 28,516
- In Stock ：
- 28,516
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Element Configuration :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 30A
- Voltage - Rated DC :
- 600V
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 2
- Published :
- 2006
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Series :
- PolarHV™
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Fall Time (Typ) :
- 25 ns
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Power Dissipation (Max) :
- 540W (Tc)
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Rise Time :
- 20ns
- Package / Case :
- PLUS-220SMD
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Number of Terminals :
- 2
- Drain to Source Breakdown Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 30A
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.24Ohm
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 80 ns
- DS Breakdown Voltage-Min :
- 600 V
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 80A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 540W Tc
- Manufacturer :
- IXYS Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- PLUS-220SMD
- Power Dissipation :
- 540W
- Datasheets
- IXTV30N60PS
N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V PLUS-220SMD
IXTV30N60PS Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTV30N60PS Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTV30N60PS Applications
There are a lot of IXYS
IXTV30N60PS applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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