IXTV22N50PS

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

PLUS-220SMD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Continuous Drain Current (ID) :

22A

Number of Terminals :

2

Power Dissipation :

350W

Reach Compliance Code :

Compliant

Terminal Position :

Single

Package / Case :

PLUS-220SMD

Power Dissipation-Max :

350W Tc

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rise Time :

27ns

FET Feature :

--

DS Breakdown Voltage-Min :

500 V

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Product Status :

Obsolete

Surface Mount :

yes

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Element Configuration :

Single

Voltage - Rated DC :

500V

Turn-Off Delay Time :

75 ns

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

21 ns

Manufacturer :

IXYS Corporation

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

50A

Pbfree Code :

yes

Case Connection :

DRAIN

Series :

PolarHV™

Power Dissipation (Max) :

350W (Tc)

Avalanche Energy Rating (Eas) :

750 mJ

Drain Current-Max (Abs) (ID) :

22 A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Power Dissipation-Max (Abs) :

350 W

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Pin Count :

3

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Current Rating :

22A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Drain-source On Resistance-Max :

0.27Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 25V