IXTV22N60PS

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Mfr.Part #
IXTV22N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS-220SMD
Stock
27,393
In Stock :
27,393

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
PLUS-220SMD
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Product Status :
Obsolete
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Turn-Off Delay Time :
60 ns
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Supplier Device Package :
PLUS-220SMD
Power Dissipation (Max) :
400W (Tc)
Continuous Drain Current (ID) :
22A
Reach Compliance Code :
Compliant
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Drain to Source Breakdown Voltage :
600V
Drain-source On Resistance-Max :
0.35 Ω
Rise Time :
20ns
Number of Elements :
1
Voltage - Rated DC :
600V
FET Feature :
--
DS Breakdown Voltage-Min :
600 V
Transistor Element Material :
SILICON
Published :
2006
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
RoHS Compliant
Drain to Source Voltage (Vdss) :
600V
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Vgs (Max) :
±30V
Power Dissipation :
400W
Avalanche Energy Rating (Eas) :
1000 mJ
Qualification Status :
Not Qualified
Number of Terminals :
2
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
66A
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Packaging :
Tube
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Series :
PolarHV™
Power Dissipation-Max :
400W Tc
Fall Time (Typ) :
23 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
Gate to Source Voltage (Vgs) :
30V
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS Corporation
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Mounting Type :
Surface Mount
Current Rating :
22A
Transistor Application :
SWITCHING
Pin Count :
3
Terminal Form :
Gull wing
Package :
Tube
Datasheets
IXTV22N60PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, IXTV22N60PS pinout, IXTV22N60PS datasheet PDF, IXTV22N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V PLUS-220SMD

IXTV22N60PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 66A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTV22N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXTV22N60PS Applications


There are a lot of IXYS
IXTV22N60PS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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