IXTV102N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Number of Pins :

3

Drain to Source Voltage (Vdss) :

200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Mounting Type :

Through Hole

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

1200 mJ

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3, Short Tab

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Continuous Drain Current (ID) :

102A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 1mA

RoHS Status :

RoHS Compliant

Supplier Device Package :

PLUS220

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

200V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Drain-source On Resistance-Max :

0.023 Ω

Pulsed Drain Current-Max (IDM) :

250A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Fall Time (Typ) :

25 ns

Rise Time :

26ns

Transistor Application :

SWITCHING

Terminal Position :

Single

Manufacturer :

IXYS Corporation

Product Status :

Obsolete

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

FET Feature :

--

FET Type :

N-Channel

Surface Mount :

No

Power Dissipation (Max) :

750W (Tc)

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2007

Polarity/Channel Type :

N-Channel

Series :

TrenchHV™

Power Dissipation :

750W

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200 V

Turn-Off Delay Time :

50 ns

Power Dissipation-Max :

750W Tc