IXTV22N60P
- Mfr.Part #
- IXTV22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS220
- Stock
- 11,451
- In Stock :
- 11,451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 400W (Tc)
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Product Status :
- Obsolete
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 66A
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 600V
- Turn-Off Delay Time :
- 60 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- -
- Series :
- PolarHV™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Package / Case :
- TO-220-3, Short Tab
- Continuous Drain Current (ID) :
- 22A
- Current Rating :
- 22A
- Terminal Position :
- Single
- Supplier Device Package :
- PLUS220
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 23 ns
- Power Dissipation :
- 400W
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Rise Time :
- 20ns
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS Corporation
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Packaging :
- Tube
- Power Dissipation-Max :
- 400W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Voltage - Rated DC :
- 600V
- JESD-30 Code :
- R-PSIP-T3
- Drain-source On Resistance-Max :
- 0.35 Ω
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Datasheets
- IXTV22N60P
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-220-3, Short Tab
IXTV22N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTV22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXTV22N60P Applications
There are a lot of IXYS
IXTV22N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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