IXTV30N50PS

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Mfr.Part #
IXTV30N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 30A PLUS-220SMD
Stock
39,867
In Stock :
39,867

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
1200 mJ
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Drain to Source Voltage (Vdss) :
500V
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
21 ns
Polarity/Channel Type :
N-Channel
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 250μA
Voltage - Rated DC :
500V
Series :
PolarHV™
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Power Dissipation-Max :
460W Tc
Number of Elements :
1
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS Corporation
Drain-source On Resistance-Max :
0.2Ohm
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
75A
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
30A
Surface Mount :
yes
Power Dissipation :
460W
Supplier Device Package :
PLUS-220SMD
Power Dissipation (Max) :
460W (Tc)
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Number of Terminals :
2
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27ns
Package / Case :
PLUS-220SMD
Terminal Position :
Single
Pin Count :
3
Drain to Source Breakdown Voltage :
500V
Element Configuration :
Single
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
75 ns
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Package Shape :
RECTANGULAR
Current Rating :
30A
Product Status :
Obsolete
Mount :
Surface Mount
FET Type :
N-Channel
Datasheets
IXTV30N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N50PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:PLUS-220SMD, IXTV30N50PS pinout, IXTV30N50PS datasheet PDF, IXTV30N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V PLUS-220SMD

IXTV30N50PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4150pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 75A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTV30N50PS Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXTV30N50PS Applications


There are a lot of IXYS
IXTV30N50PS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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