IXTU2N80P
- Mfr.Part #
- IXTU2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO251
- Stock
- 43,605
- In Stock :
- 43,605
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 4A
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 35ns
- Power Dissipation :
- 70W
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 70W (Tc)
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Terminal Position :
- Single
- Fall Time (Typ) :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Package :
- Tube
- Supplier Device Package :
- TO-251
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800 V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 53 ns
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Drain Current-Max (Abs) (ID) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 2A
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Drain to Source Voltage (Vdss) :
- 800V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Pin Count :
- 3
- Published :
- 2006
- Power Dissipation-Max :
- 70W Tc
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 6Ohm
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 800V
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 100 mJ
- JEDEC-95 Code :
- TO-251AA
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Series :
- PolarHV™
- Pbfree Code :
- yes
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Datasheets
- IXTU2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
IXTU2N80P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTU2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)
IXTU2N80P Applications
There are a lot of IXYS
IXTU2N80P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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