IXTU2N80P

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Mfr.Part #
IXTU2N80P
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO251
Stock
43,605
In Stock :
43,605

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
4A
Manufacturer :
IXYS Corporation
Rise Time :
35ns
Power Dissipation :
70W
Mounting Type :
Through Hole
Power Dissipation (Max) :
70W (Tc)
Polarity/Channel Type :
N-Channel
Product Status :
Obsolete
JESD-30 Code :
R-PSIP-T3
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Terminal Position :
Single
Fall Time (Typ) :
28 ns
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Package :
Tube
Supplier Device Package :
TO-251
Number of Terminations :
3
Number of Elements :
1
Gate to Source Voltage (Vgs) :
30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
800 V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mount :
Through Hole
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
53 ns
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
2A
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Drain to Source Voltage (Vdss) :
800V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Pin Count :
3
Published :
2006
Power Dissipation-Max :
70W Tc
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
6Ohm
Additional Feature :
AVALANCHE RATED
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Transistor Element Material :
SILICON
Surface Mount :
No
Drain to Source Breakdown Voltage :
800V
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
100 mJ
JEDEC-95 Code :
TO-251AA
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Vgs (Max) :
±30V
Series :
PolarHV™
Pbfree Code :
yes
Packaging :
Tube
Reach Compliance Code :
Compliant
Datasheets
IXTU2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU2N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~150°C TJ, IXTU2N80P pinout, IXTU2N80P datasheet PDF, IXTU2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU2N80P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTU2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)


IXTU2N80P Applications


There are a lot of IXYS
IXTU2N80P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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