IXTU05N100
- Mfr.Part #
- IXTU05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO251
- Stock
- 35,645
- In Stock :
- 35,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 40W Tc
- Product Type :
- MOSFET
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 1000 V
- Base Product Number :
- IXTU05
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 3A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Continuous Drain Current (ID) :
- 750mA
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 40W
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Number of Elements :
- 1
- Series :
- --
- Brand :
- IXYS
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSIP-T3
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 40 W
- Supplier Device Package :
- TO-251
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-251
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 40W (Tc)
- Published :
- 2012
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 17 Ω
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 3
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Datasheets
- IXTU05N100

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
IXTU05N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTU05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTU05N100 Applications
There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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