IXTU02N50D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 25μA

Configuration :

Single

Rds On (Max) @ Id, Vgs :

30 Ω @ 50mA, 0V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.1W

Subcategory :

MOSFETs

DS Breakdown Voltage-Min :

500 V

Operating Mode :

Depletion Mode

Drain Current-Max (Abs) (ID) :

0.2A

Transistor Polarity :

N-Channel

Rise Time :

4ns

Continuous Drain Current (ID) :

200mA

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drain-source On Resistance-Max :

30 Ω

JEDEC-95 Code :

TO-251AA

Supplier Device Package :

TO-251

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Height :

6.22 mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

4 ns

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Product Category :

MOSFET

Brand :

IXYS

Package :

Tube

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

28 ns

Base Product Number :

IXTU02

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Case Connection :

DRAIN

Number of Terminations :

3

Factory Lead Time :

24 Weeks

Width :

2.38 mm

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Terminal Position :

Single

Length :

6.73 mm

Published :

2006

Manufacturer :

IXYS

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Channel Mode :

Depletion

Minimum Operating Temperature :

- 55 C

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

0.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

1.1W Ta 25W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

--

RoHS :

Details

FET Feature :

Depletion Mode

Product :

MOSFET Small Signal

Number of Terminals :

3

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

500V

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant