IXTU01N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation Ambient-Max :

25 W

Element Configuration :

Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Rds On (Max) @ Id, Vgs :

50 Ω @ 100mA, 10V

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminals :

3

Product Status :

Active

Drain Current-Max (Abs) (ID) :

0.1A

Power Dissipation-Max (Abs) :

25 W

Pin Count :

3

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Mounting Type :

Through Hole

Number of Elements :

1

Power Dissipation (Max) :

25W (Tc)

Rise Time :

12ns

Drain to Source Breakdown Voltage :

800V

Continuous Drain Current (ID) :

100mA

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Fall Time (Typ) :

28 ns

FET Type :

N-Channel

Pbfree Code :

yes

FET Feature :

--

Terminal Position :

Single

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Series :

--

Drain to Source Voltage (Vdss) :

800V

Power Dissipation :

25W

DS Breakdown Voltage-Min :

800 V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

28 ns

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Supplier Device Package :

TO-251

JEDEC-95 Code :

TO-251AA

HTS Code :

8541.29.00.95

Number of Terminations :

3

ECCN Code :

EAR99

Manufacturer :

IXYS Corporation

Power Dissipation-Max :

25W Tc

Package :

Tube

Drain-source On Resistance-Max :

50 Ω

Published :

2003

Base Product Number :

IXTU01

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

0.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE