IXTT96N15P
- Mfr.Part #
- IXTT96N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 96A TO268
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Supplier Device Package :
- TO-268
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Number of Terminals :
- 2
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.024Ohm
- Continuous Drain Current (ID) :
- 96A
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- DS Breakdown Voltage-Min :
- 150 V
- Power Dissipation :
- 480W
- FET Feature :
- --
- Drain to Source Resistance :
- 24 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Channel Mode :
- Enhancement
- Length :
- 16.05 mm
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 250A
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-268AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 66 ns
- Min Operating Temperature :
- -55 °C
- Pin Count :
- 4
- Power Dissipation-Max :
- 480W Tc
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 480W (Tc)
- Reach Compliance Code :
- not_compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Subcategory :
- MOSFETs
- Drain to Source Voltage (Vdss) :
- 150 V
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 18 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2006
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Compliant
- Transistor Element Material :
- SILICON
- Max Operating Temperature :
- 175 °C
- Width :
- 14 mm
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Breakdown Voltage :
- 150V
- Rise Time :
- 33ns
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Number of Channels :
- 1 Channel
- Series :
- PolarHT™
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Surface Mount
- Height :
- 5.1 mm
- Base Product Number :
- IXTT96
- Rds On Max :
- 24 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Configuration :
- Single
- Max Power Dissipation :
- 480 W
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Input Capacitance :
- 3.5 nF
- Terminal Position :
- Single
- Datasheets
- IXTT96N15P

N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT96N15P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 96A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 66 ns.Peak drain current is 250A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 24 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150 V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTT96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
single MOSFETs transistor is 24 mΩ
a 150 V drain to source voltage (Vdss)
IXTT96N15P Applications
There are a lot of IXYS
IXTT96N15P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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