IXTT75N10L2

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Mfr.Part #
IXTT75N10L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO268
Stock
5
In Stock :
5

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Drain-source On Resistance-Max :
0.021Ohm
Maximum Operating Temperature :
+ 150 C
Rise Time :
14 ns
Number of Terminations :
2
Pbfree Code :
yes
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Terminal Position :
Single
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Mounting Style :
SMD/SMT
Transistor Polarity :
N-Channel
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Packaging :
Tube
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Pin Count :
4
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
24 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
21m Ω @ 500mA, 10V
Brand :
IXYS
Series :
Linear L2™
Avalanche Energy Rating (Eas) :
2500 mJ
Rds On Max :
21 mΩ
Power Dissipation (Max) :
400W (Tc)
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Drain to Source Voltage (Vdss) :
100V
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
75A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
400 W
FET Type :
N-Channel
Published :
2009
Package :
Tube
Base Product Number :
IXTT75
Drain to Source Resistance :
21 mΩ
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Transistor Application :
AMPLIFIER
Pulsed Drain Current-Max (IDM) :
225A
Number of Elements :
1
Terminal Finish :
PURE TIN
Product Type :
MOSFET
RoHS :
Compliant
Power Dissipation-Max :
400W Tc
Supplier Device Package :
TO-268
Vgs (Max) :
±20V
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Unknown
Product Status :
Active
Input Capacitance :
8.1 nF
Mount :
Surface Mount
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
215nC @ 10V
DS Breakdown Voltage-Min :
100V
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXTT75N10L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT75N10L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTT75N10L2 pinout, IXTT75N10L2 datasheet PDF, IXTT75N10L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT75N10L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT75N10L2


N-Channel Tube 21m Ω @ 500mA, 10V ±20V 8100pF @ 25V 215nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT75N10L2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.Peak drain current for this device is 225A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 21 MΩ exists between the drain and source.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT75N10L2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
based on its rated peak drain current 225A.
single MOSFETs transistor is 21 MΩ
a 100V drain to source voltage (Vdss)


IXTT75N10L2 Applications


There are a lot of IXYS
IXTT75N10L2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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