IXTT75N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Terminal Form :

Gull wing

Element Configuration :

Single

Transistor Application :

SWITCHING

Number of Terminals :

2

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

24 Weeks

Power Dissipation-Max :

300W Tc

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXTT75

Rds On (Max) @ Id, Vgs :

20m Ω @ 37.5A, 10V

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

60ns

Turn-Off Delay Time :

100 ns

Number of Elements :

1

Brand :

IXYS

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100 V

Drain to Source Voltage (Vdss) :

100 V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tube

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Product Category :

MOSFET

Product Status :

Active

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~150°C TJ

FET Feature :

-

JESD-609 Code :

e3

Published :

2003

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Fall Time (Typ) :

30 ns

Surface Mount :

yes

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Power Dissipation :

300W

Pin Count :

4

Series :

MegaMOS™

Power Dissipation (Max) :

300W (Tc)

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Transistor Type :

1 N-Channel

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 4mA

Pulsed Drain Current-Max (IDM) :

300A

Continuous Drain Current (ID) :

75A

Drain-source On Resistance-Max :

0.02Ohm

Subcategory :

MOSFETs

JEDEC-95 Code :

TO-268AA

Supplier Device Package :

TO-268AA

ECCN Code :

EAR99