IXTT74N20P
- Mfr.Part #
- IXTT74N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A TO268
- Stock
- 43,855
- In Stock :
- 43,855
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 34mOhm
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-268
- Surface Mount :
- yes
- Published :
- 2006
- Drain-source On Resistance-Max :
- 0.034 Ω
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 21 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 400W
- Series :
- PolarHT™
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Rise Time :
- 21ns
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Tradename :
- PolarHT
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Width :
- 16.05 mm
- Mounting Style :
- SMD/SMT
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 74 A
- Drain to Source Breakdown Voltage :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 480W (Tc)
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 175 C
- Pulsed Drain Current-Max (IDM) :
- 200A
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 74A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 5.1 mm
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 480W Tc
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max (Abs) :
- 480 W
- Number of Terminals :
- 2
- ECCN Code :
- EAR99
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- JEDEC-95 Code :
- TO-268AA
- Length :
- 14 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 200 V
- Type :
- PolarHT Power MOSFET
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Base Product Number :
- IXTT74
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 200V
- Package :
- Tube
- Turn-Off Delay Time :
- 60 ns
- Brand :
- IXYS
- Datasheets
- IXTT74N20P

N-Channel Tube 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXTT74N20P Applications
There are a lot of IXYS
IXTT74N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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