IXTT72N20
- Mfr.Part #
- IXTT72N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 72A TO268
- Stock
- 46,070
- In Stock :
- 46,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Height :
- 5.1 mm
- Drain to Source Voltage (Vdss) :
- 200V
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 400W (Tc)
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 400W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 80 ns
- Element Configuration :
- Single
- Base Product Number :
- IXTT72
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Number of Terminals :
- 2
- Mounting Style :
- SMD/SMT
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rise Time :
- 30ns
- Pulsed Drain Current-Max (IDM) :
- 288A
- Drain-source On Resistance-Max :
- 0.033Ohm
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-268AA
- Product Status :
- Active
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 400W Tc
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-268
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Transistor Type :
- 1 N-Channel
- Mount :
- Surface Mount
- Series :
- --
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 20 ns
- Product Type :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- Package :
- Tube
- Subcategory :
- MOSFETs
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Published :
- 2003
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 72A
- Length :
- 16.05 mm
- DS Breakdown Voltage-Min :
- 200 V
- Drain to Source Breakdown Voltage :
- 200V
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Mounting Type :
- Surface Mount
- Width :
- 14 mm
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXTT72N20

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT72N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT72N20 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)
IXTT72N20 Applications
There are a lot of IXYS
IXTT72N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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