IXTT72N20

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Mfr.Part #
IXTT72N20
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 200V 72A TO268
Stock
46,070
In Stock :
46,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Vgs (Max) :
±20V
Height :
5.1 mm
Drain to Source Voltage (Vdss) :
200V
JESD-609 Code :
e3
Pin Count :
4
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
400W (Tc)
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Transistor Polarity :
N-Channel
Power Dissipation :
400W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Unknown
Terminal Form :
Gull wing
Case Connection :
DRAIN
Turn-Off Delay Time :
80 ns
Element Configuration :
Single
Base Product Number :
IXTT72
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Number of Terminals :
2
Mounting Style :
SMD/SMT
Avalanche Energy Rating (Eas) :
1500 mJ
Rise Time :
30ns
Pulsed Drain Current-Max (IDM) :
288A
Drain-source On Resistance-Max :
0.033Ohm
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-268AA
Product Status :
Active
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
400W Tc
Qualification Status :
Not Qualified
Supplier Device Package :
TO-268
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Transistor Type :
1 N-Channel
Mount :
Surface Mount
Series :
--
Number of Elements :
1
Channel Mode :
Enhancement
Brand :
IXYS
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
20 ns
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Package :
Tube
Subcategory :
MOSFETs
Number of Channels :
1 Channel
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Published :
2003
Surface Mount :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
72A
Length :
16.05 mm
DS Breakdown Voltage-Min :
200 V
Drain to Source Breakdown Voltage :
200V
Pbfree Code :
yes
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Mounting Type :
Surface Mount
Width :
14 mm
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXTT72N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT72N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, IXTT72N20 pinout, IXTT72N20 datasheet PDF, IXTT72N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT72N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT72N20


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT72N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT72N20 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)


IXTT72N20 Applications


There are a lot of IXYS
IXTT72N20 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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