IXTT6N120

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Mfr.Part #
IXTT6N120
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1200V 6A TO268
Stock
267
In Stock :
267

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-268
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Drain to Source Voltage (Vdss) :
1200V
FET Feature :
--
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
6A
JESD-609 Code :
e3
Drain to Source Resistance :
2.4 Ω
Element Configuration :
Single
Configuration :
Single
Channel Mode :
Enhancement
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Resistance :
2.6MOhm
Number of Elements :
1
Width :
16.05 mm
Power Dissipation :
300W
Rds On (Max) @ Id, Vgs :
2.6 Ω @ 3A, 10V
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
24A
Power Dissipation-Max :
300W Tc
Rise Time :
33ns
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
RoHS :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Number of Channels :
1 Channel
Lead Free :
Lead Free
Brand :
IXYS
Product Type :
MOSFET
Type :
High Voltage Power MOSFET
Series :
--
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Rds On Max :
2.6 Ω
Transistor Element Material :
SILICON
Subcategory :
MOSFETs
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Form :
Gull wing
Package :
Box
Vgs (Max) :
±20V
Number of Terminations :
2
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max) :
300W (Tc)
Published :
2004
Product Category :
MOSFET
Product Status :
Active
Input Capacitance :
1.95 nF
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
6A
Height :
5.1 mm
Length :
14 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Operating Temperature :
150 °C
Max Power Dissipation :
300 W
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
500 mJ
Min Operating Temperature :
-55 °C
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
SMD/SMT
Manufacturer :
IXYS
Factory Lead Time :
24 Weeks
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
4
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
1.2kV
Turn-Off Delay Time :
42 ns
Packaging :
Tube
FET Type :
N-Channel
Fall Time (Typ) :
18 ns
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Base Product Number :
IXTT6
Datasheets
IXTT6N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT6N120 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Type:High Voltage Power MOSFET, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT6N120 pinout, IXTT6N120 datasheet PDF, IXTT6N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT6N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT6N120


N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT6N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.A device's maximum input capacitance is 1950pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 6A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.4 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT6N120 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 2.4 Ω
a 1200V drain to source voltage (Vdss)


IXTT6N120 Applications


There are a lot of IXYS
IXTT6N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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