IXTT69N30P

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Mfr.Part #
IXTT69N30P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 69A TO268
Stock
6,988
In Stock :
6,988

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
4
Drain to Source Resistance :
49 mΩ
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Product Type :
MOSFET
Factory Lead Time :
24 Weeks
Base Product Number :
IXTT69
Avalanche Energy Rating (Eas) :
1500 mJ
Fall Time (Typ) :
27 ns
Drain-source On Resistance-Max :
0.049Ohm
Series :
PolarHT™
Rds On Max :
49 mΩ
Min Operating Temperature :
-55 °C
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
JEDEC-95 Code :
TO-268AA
Drain to Source Breakdown Voltage :
300V
Power Dissipation-Max :
500W Tc
Package Shape :
RECTANGULAR
Surface Mount :
yes
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
75 ns
Max Power Dissipation :
500 W
Length :
14 mm
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Product Category :
MOSFET
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
4960pF @ 25V
Supplier Device Package :
TO-268
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Product Status :
Active
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
49m Ω @ 500mA, 10V
Power Dissipation :
500W
Continuous Drain Current (ID) :
69A
FET Type :
N-Channel
Brand :
IXYS
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
200A
JESD-609 Code :
e3
Terminal Position :
Single
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Power Dissipation (Max) :
500W (Tc)
Manufacturer :
IXYS
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mount :
Surface Mount
Number of Terminals :
2
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
500 W
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Mounting Type :
Surface Mount
Pbfree Code :
yes
Qualification Status :
Not Qualified
Input Capacitance :
4.96 nF
Max Operating Temperature :
150 °C
Tradename :
PolarHT
Height :
5.1 mm
DS Breakdown Voltage-Min :
300 V
Current - Continuous Drain (Id) @ 25°C :
69A Tc
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Rise Time :
25ns
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Channel Mode :
Enhancement
Type :
PolarHT Power MOSFET
Drain to Source Voltage (Vdss) :
300V
Transistor Application :
SWITCHING
Width :
16.05 mm
Reach Compliance Code :
not_compliant
Number of Channels :
1 Channel
Drain Current-Max (Abs) (ID) :
69 A
RoHS :
Compliant
Published :
2006
Datasheets
IXTT69N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT69N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Type:PolarHT Power MOSFET, Number of Channels:1 Channel, IXTT69N30P pinout, IXTT69N30P datasheet PDF, IXTT69N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT69N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT69N30P


N-Channel Tube 49m Ω @ 500mA, 10V ±20V 4960pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT69N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4960pF @ 25V.This device conducts a continuous drain current (ID) of 69A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 69 A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 49 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT69N30P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 49 mΩ
a 300V drain to source voltage (Vdss)


IXTT69N30P Applications


There are a lot of IXYS
IXTT69N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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