IXTT68P20T
- Mfr.Part #
- IXTT68P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 68A TO268
- Stock
- 6,422
- In Stock :
- 6,422
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 568W (Tc)
- Transistor Polarity :
- P-Channel
- Vgs (Max) :
- ±15V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 568W
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 200V
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-268
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 200A
- Drain-source On Resistance-Max :
- 0.055Ohm
- Number of Pins :
- 3
- Series :
- TrenchP™
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gate to Source Voltage (Vgs) :
- 15V
- DS Breakdown Voltage-Min :
- 200V
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Factory Lead Time :
- 24 Weeks
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 68A Tc
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 68A
- Product Category :
- MOSFET
- Number of Elements :
- 1
- FET Feature :
- --
- JESD-609 Code :
- e3
- Base Product Number :
- IXTT68
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 568W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Matte Tin (Sn)
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 34A, 10V
- Published :
- 2013
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 P-Channel
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Reach Compliance Code :
- not_compliant
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 33400pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- JESD-30 Code :
- R-PSSO-G2
- Number of Channels :
- 1 Channel
- Pin Count :
- 4
- Datasheets
- IXTT68P20T

P-Channel Tube 55m Ω @ 34A, 10V ±15V 33400pF @ 25V 380nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT68P20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 33400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 68A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTT68P20T Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 68A
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXTT68P20T Applications
There are a lot of IXYS
IXTT68P20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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